(PDF) 2SK3161 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3161
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
Logotipo
Hay una vista previa y un enlace de descarga de 2SK3161 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas
No Preview Available ! 2SK3161(L), 2SK3161(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 90 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 ADE-208-734A (Z) 2nd. Edition February 1999 D1 2 3 G 1 2 3 1. Gate 2. Drain 3. Source 4. Drain S 1 page 2SK3161(L),2SK3161(S) 1000 500 Body–Drain Diode Reverse Recovery Time di / dt = 50 A / µs VGS = 0, Ta = 25°C 200 100 50 20 10 0.1 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 10000 5000 Typical Capacitance vs. Drain to Source Voltage 2000 1000 Ciss 500 200 Coss 100 Crss 50 20 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 200 20 160 VDS 120 VGS 16 VDD = 150 V 100 V 50 V 12 80 8 I D = 15 A 40 VDD = 150 V 100 V 4 50 V 0 0 40 80 120 160 200 Gate Charge Qg (nc) Switching Characteristics 500 300 t d(off) tf 100 30 t r t d(on) 10 3 1 0.1 0.3 VGS = 10 V, V DD = 30 V PW = 5 µs, duty < 1% 1 3 10 30 100 Drain Current I D (A) 5 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet 2SK3161.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF 2SK3161 Data sheet ( Hoja de datos )