(PDF) 2SK3153 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3153
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK3153 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 65 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM ADE-208-733A (Z) 2nd. Edition February 1999 D G S 123 1. Gate 2. Drain 3. Source 1 page 2SK3153 1000 Body–Drain Diode Reverse Recovery Time 300 100 30 di / dt = 50 A / µs 10 0.1 0.3 VGS = 0, Ta = 25 °C 1 3 10 30 Reverse Drain Current I DR (A) 10000 3000 1000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 300 Coss 100 30 Crss 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 200 I D = 15 A 20 160 VGS 16 120 12 VDD = 120 V 50 V 80 25 V 8 40 VDD = 120 V 4 50 V 25 V VDS 0 0 20 40 60 80 100 Gate Charge Qg (nc) 1000 Switching Characteristics 500 t d(off) 200 100 t f 50 t r 20 t d(on) 10 5 2 1 0.1 0.2 VGS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.5 1 2 5 10 20 50 Drain Current I D (A) 5 5 Page

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PDF 2SK3153 Data sheet ( Hoja de datos )