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2SK3151 Schematic ( PDF Datasheet ) - Hitachi Semiconductor

Teilenummer 2SK3151
Beschreibung Silicon N Channel MOS FET High Speed Power Switching
Hersteller Hitachi Semiconductor
Logo Hitachi Semiconductor Logo 



Gesamt 9 Seiten
		
2SK3151 Datasheet, Funktion
2SK3151
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS (on) = 11.5 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
TO–3P
ADE-208-747A (Z)
2nd. Edition
February 1999
D
2
1
G
1
2
33
S
1. Gate
2. Drain
(Flange)
3. Source






2SK3151 Datasheet, Funktion
2SK3151
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
40
30
VGS = 0, –5 V
20 5 V
10
Pulse Test
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSDF (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
250
I AP = 50 A
200 V DD = 50 V
duty < 0.1 %
Rg > 50
150
100
50
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
EAR =
1
2
• L • I AP2
VDSS
VDSS – V DD
I AP
ID
V(BR)DSS
VDS
VDD
0
6

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