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2SK3150 Schematic ( PDF Datasheet ) - Hitachi Semiconductor

Teilenummer 2SK3150
Beschreibung Silicon N Channel MOS FET High Speed Power Switching
Hersteller Hitachi Semiconductor
Logo Hitachi Semiconductor Logo 




Gesamt 9 Seiten
2SK3150 Datasheet, Funktion
2SK3150(L), 2SK3150(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 45 mtyp.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4
4
ADE-208-750A (Z)
2nd. Edition
February 1999
D1
2
3
G
1
2
3 1. Gate
2. Drain
3. Source
4. Drain
S






2SK3150 Datasheet, Funktion
2SK3150(L),2SK3150(S)
Reverse Drain Current vs.
Source to Drain Voltage
20
Pulse Test
16
12 10 V
8 5V
4
VGS = 0, –5 V
0 0.2 0.4 0.6 0.8 1.0
Source to Drain Voltage VSD (V)
Maximun Avalanche Energy vs.
Channel Temperature Derating
50
I AP = 20 A
40
VDD = 50 V
duty < 0.1 %
Rg > 50
30
20
10
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Vin
15 V
Avalanche Test Circuit
Avalanche Waveform
V DS
Monitor
Rg
50
L
I AP
Monitor
D. U. T
VDD
EAR =
1
2
• L • I AP2
VDSS
VDSS – V DD
I AP
ID
V(BR)DSS
VDS
VDD
0
6

6 Page







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