(PDF) 2SK3147S Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK3147S
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK3147(L),2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 ADE-208-731 (Z) 1st. Edition February 1999 D 2 1 G 3 S 12 3 12 3 1. Gate 2. Drain 3. Source 4. Drain 1 page 2SK3147(L),2SK3147(S) 1000 500 Body–Drain Diode Reverse Recovery Time di / dt = 50 A / µs VGS = 0, Ta = 25 °C 200 100 50 20 10 0.1 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) 5000 Typical Capacitance vs. Drain to Source Voltage 2000 1000 500 Ciss 200 100 Coss 50 Crss 20 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 200 ID=5A 160 VDD = 100 V 50 V 25 V 120 VGS 80 20 16 12 8 40 V DD = 100 V 4 50 V 25 V VDS 0 0 8 16 24 32 40 Gate Charge Qg (nc) Switching Characteristics 500 300 t d(off) 100 tf 30 tr 10 3 1 0.1 t d(on) VGS = 10 V, V DD = 30 V PW = 5 µs, duty < 1 % 0.3 1 3 10 30 100 Drain Current I D (A) 5 5 Page

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PDF 2SK3147S Data sheet ( Hoja de datos )