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PDF 2SK3136 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3136 | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK3136 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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2SK3136
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
D
ADE-208-696B (Z)
3rd. Edition
February 1999
G
S
1
2
3
1. Gate
2. Drain(Flange)
3. Source
1 page  
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
Pulse Test
0.4
0.3
I D = 50 A
0.2
0.1
10 A
20 A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
2SK3136
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
VGS = 4 V
5
10 V
2
1
1 3 10
30 100 300 1000
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12 I D = 50 A
8 VGS = 10 V
10, 20 A
4
4V
10, 20, 50 A
0
–50 0
50 100 150 200
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
500
V DS = 10 V
200 Pulse Test
100
50 Tc = –25 °C
20
10
5
2
1
0.5
0.1
25 °C
75 °C
0.3 1 3 10 30
Drain Current I D (A)
100
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SK3136.PDF ] | |
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