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Teilenummer | 2SK3069 |
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Beschreibung | Silicon N Channel MOS FET High Speed Power Switching | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 10 Seiten 2SK3069
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
TO–220AB
D
ADE-208-694I (Z)
10th. Edition
February 1999
G
S
1
2
3
1. Gate
2. Drain(Flange)
3. Source
2SK3069
1000
500
Body–Drain Diode Reverse
Recovery Time
200
100
50
20 di / dt = 50 A / µs
10
0.1 0.3
VGS = 0, Ta = 25°C
1 3 10 30 100
Reverse Drain Current I DR (A)
30000
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
3000
1000
Coss
300 Crss
100
0
10 20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
I D = 75 A
80 VGS
60
VDS
40
VDD = 50 V
25 V
10 V
20
16
12
8
20 VDD = 50 V
25 V
4
10 V
0
0 80 160 240 320 400
Gate Charge Qg (nc)
1000
500
200
100
50
Switching Characteristics
t d(off)
tf
tr
t d(on)
20
10
0.1 0.2
VGS = 10 V, V DD = 30 V
PW = 5 µs, duty < 1%
0.5 1 2 5 10 20 50 100
Drain Current I D (A)
6
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ 2SK3069 Schematic.PDF ] |
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