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PDF 2SK3064 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3064 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Silicon MOS FETs (Small Signal)
2SK3064
Silicon N-Channel MOS FET
Secondary battery pack (Li ion battery, etc.)
For switching
s Features
q High-speed switching
q S-mini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing.
q Low-voltage drive (Vth: −1 to 2V)
q Low Ron
unit: mm
0.425
2.1±0.1
1.25±0.1
0.425
1
3
2
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol Ratings
Drain to Source voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
VDS
VGSO
ID
IDP
PD
Tch
Tstg
30
±20
100
200
150
150
−55 to +150
Unit
V
V
mA
mA
mW
°C
°C
0.2±0.1
1: Gate
2: Source
3: Drain
EIAJ: SC-70
S-Mini Type Package (3-pin)
Marking Symbol: 2D
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
min typ max Unit
Drain current
Gate cut-off current
Gate threshold voltage
IDSS VDS = 30V, VGS = 0
IGSS VGS = ±20V, VDS = 0
Vth VDS = 5V, ID = 1µA
0.1 µA
±1 µA
1 2V
Forward transfer admittance
| Yfs |
VDS = 5V, ID = 10mA
15
mS
Drain to source ON-resistance RDS(on) VDS = 5V, ID = 10mA
30 50 Ω
Turn-on time
ton VDD = 5V, VGS = 0 to 5V, RL = 200Ω
150
ns
Turn-off time
toff VDD = 5V, VGS = 0 to 5V, RL = 200Ω
35
ns
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SK3064.PDF ] | |
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