|
|
Teilenummer | 2SK3062-S |
|
Beschreibung | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
Hersteller | NEC | |
Logo | ||
Gesamt 8 Seiten DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3062
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low on-state resistance
RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A)
RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A)
• Low Ciss: Ciss = 5200 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3062
TO-220AB
2SK3062-S
TO-262
2SK3062-ZJ
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, −10
±70
±280
100
1.5
150
–55 to +150
35
122.5
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13101EJ1V0DS00 (1st edition)
Date Published April 1999 NS CP(K)
Printed in Japan
©
1998,1999
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
IAS = 35 A
10 EAS = 122.5 mJ
1.0
RG = 25 Ω
VDD = 30 V
VGS = 20 V → 0 V
0.1 Starting Tch = 25 °C
10 µ 100 µ
1m
L - Inductive Load - H
10 m
2SK3062
SINGLE AVALANCHE ENERGY
DERATING FACTOR
160
VDD = 30 V
140
RG = 25 Ω
VGS = 20 V → 0 V
120 IAS ≤ 35 A
100
80
60
40
20
0
25 50 75 100 125 150
Starting Tch - Starting Channel Temperature - ˚C
6 Data Sheet D13101EJ1V0DS00
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ 2SK3062-S Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
2SK3062-S | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
2SK3062-ZJ | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |