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PDF 2SK2978 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2978 | |
| Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2978 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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2SK2978
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS(on) = 0.09Ω typ. (VGS = 4 V, ID = 1.5 A)
• Low drive current
• High speed switching
• 2.5V gate drive devices.
Outline
UPAK
ADE-208-659B (Z)
3rd. Edition
Jun 1998
21
3
D
4
G
S
1. Gate
2. Drain
3. Source
4. Drain
1 page  
2SK2978
Body–Drain Diode Reverse
Recovery Time
100
50
20
di / dt = 50 A / µs
10
0.1 0.2
VGS = 0, Ta = 25 °C
0.5 1 2
5 10
Reverse Drain Current I DR (A)
1000
Typical Capacitance vs.
Drain to Source Voltage
300 Ciss
Coss
100
Crss
30
10
3 VGS = 0
f = 1 MHz
1
0 5 10 15 20 25
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
50
I D = 2.5 A
20
40 16
VGS
30 12
VDD = 10 V
5V
20 8
10
VDD = 10 V
4
5V
VDS
0
0 4 8 12 16 20
Gate Charge Qg (nc)
1000
500
Switching Characteristics
VGS = 4 V, V DD = 10 V
PW = 5 µs, duty < 1 %
200
100
tf
50
tr
t d(off)
20 t d(on)
10
0.1 0.2
0.5 1
2
5
Drain Current I D (A)
10
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2978.PDF ] | |
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