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PDF 2SK2973 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2973 | |
| Descripción | RF POWER MOS FET(VHF/UHF power amplifiers) | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
| Logotipo |  |
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MITSUBISHI RF POWER MOS FET
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
OUTLINE DRAWING
4.6MAX
FEATURES
• High power gain:Gpe≥13dB
@VDD=9.6V,f=450MHz,Pin=17dBm
• High efficiency:55% typ.
• Source case type SOT-89 package
(connected internally to source)
1.6±0.2
2
13
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
0.53
1.5 MAX
3.0
0.48MAX
1 : DRAIN
2 : SOURCE
3 : GATE
SOT-89
Dimensions in mm
1.5±0.1
0.4 +0.03
-0.05
MARKING
MARKING
TYPE No.
K1
LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Conditions
VDSS
Drain to source voltage
VGSS
Gate to source voltage
Pch Channel dissipation
Tc=25˚C
(Note2)
Tj Junction temperature
Tstg Storage temperature
Note1: Above parameters are guaranteed independently.
2: Solder on printed board(Copper leaf area;70×70mm,t=1.6mm Epoxy glass)
Ratings
17
±10
1.5
150
-40 to +110
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Test conditions
IDSS
VDS=12V, VGS=0V
IGSS
VGS=10V, VDS=0V
VTH Threshold voltage
VDS=7V, IDS=1mA
Ciss VGS=10V, VDS=0V,f=1MHz
Coss
VDS=10V, VGS=0V,f=1MHz
Pout
hD
VDS=9.6V, Pin=50mW,f=450MHz
Note: Above parameters,ratings,limits and conditions are subject to change.
Unit
V
V
W
˚C
˚C
Limits
Min Typ Max
10
1
1.2 1.8
10
8
1 1.2
45 55
Unit
µA
µA
V
pF
pF
W
%
Nov. ´97
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK2973.PDF ] | |
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