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Número de pieza | 2SK2925S | |
Descripción | Silicon N Channel MOS FET High Speed Power Switching | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK2925S (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! 2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
RDS =0.060 Ω typ.
• High speed switching
• 4V gate drive device can be driven from 5V source
Outline
ADE-208-549C (Z)
4th. Edition
Jun 1998
DPAK–2
44
D
G
S
12 3
12 3
1. Gate
2. Drain
3. Source
4. Drain
1 page 2SK2925(L),2SK2925(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
2.0
Pulse Test
1.6
1.2
0.8
I D = 10 A
0.4 5 A
2A
0 4 8 12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
VGS = 4 V
10 V
0.02
0.01
1
2 5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
0.3
I D = 10 A 5 A 2 A
0.2
V GS = 4 V
0.1
0 10 V
10 A 2, 5 A
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
20
10 Tc = –25 °C
5
25 °C
2 75 °C
1
V DS = 10 V
0.5 Pulse Test
0.1 0.2 0.5 1 2 5 10 20
Drain Current I D (A)
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet 2SK2925S.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK2925 | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
2SK2925L | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
2SK2925S | Silicon N Channel MOS FET High Speed Power Switching | Hitachi Semiconductor |
2SK2925S | N-Channel Silicon MOSFET | Guangdong Kexin Industrial |
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