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PDF 2SK2889 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2889 | |
| Descripción | Silicon N Channel MOS Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2889 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK2889
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2889
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
z Low drain−source ON resistance
: RDS (ON) = 0.54 Ω (typ.)
z High forward transfer admittance
: |Yfs| = 9.0 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDSS = 600 V)
z Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
600 V
600 V
±30 V
10 A
40 A
100 W
363 mJ
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
IAR
EAR
Tch
Tstg
10
10
150
−55 to 150
A
mJ
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch−c)
Rth (ch−a)
1.25 °C / W
83.3 °C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
Note 3:
VDD = 90 V, Tch = 25°C (initial), L = 6.36 mH, RG = 25 Ω,
IAR = 10 A
Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2009-09-29
1 page  
2SK2889
RG = 25 Ω
VDD = 90 V, L = 6.36 mH
EAS
=
1
2
⋅ L ⋅ I2
⋅ ⎜⎛
⎝
BVDSS
BVDSS − VDD
⎟⎞
⎠
5 2009-09-29
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet 2SK2889.PDF ] | |
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