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PDF 2SK2826-S Data sheet ( Hoja de datos )
| Número de pieza | 2SK2826-S | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2826
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super Low On-State Resistance
RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID = 35 A)
RDS(on)2 = 9.7 mΩ (MAX.) (VGS = 4.0 V, ID = 35 A)
• Low Ciss : Ciss = 7200 pF (TYP.)
• Built-in Gate Protection Diode
ORDERING INFORMATION
PART NUMBER
2SK2826
2SK2826-S
2SK2826-ZJ
PACKAGE
TO-220AB
TO-262
TO-263
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS(AC)
Gate to Source Voltage (VDS = 0 V)
VGSS(DC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
60
±20
+20, –10
±70
±280
100
1.5
150
–55 to + 150
70
490
V
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW ≤ 10 µ s, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, RA = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11273EJ2V0DS00 (2nd edition)
Date Published April 1999 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1998
1 page  
2SK2826
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
20
15
VGS = 4.0 V
10
5 VGS = 10 V
0 ID = 25 A
- 50 0 50 100 150
Tch - Channel Temperature - ˚C
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
Pulsed
100
VGS = 10 V
10
VGS = 0 V
1
0.1
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
100 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
• SWITCHING CHARACTERISTICS
10 000
tr
10 000
Ciss
Coss
1 000
tf
td(off)
1 000
100
td(on)
Crss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
10
0.1
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1 10 100
ID - Drain Current - A
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0 10 100
IF - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 8
VGS
60 VDD = 48 V
30 V
12 V
40
6
4
20 2
VDS
0 50 100 150 200
QG - Gate Charge - nC
Data Sheet D11273EJ2V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2826-S.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
| 2SK2826-S | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
| 2SK2826-ZJ | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | NEC |
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