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Número de pieza | 2SK2809-01MR | |
Descripción | N-channel MOS-FET | |
Fabricantes | Fuji Electric | |
Logotipo | ||
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No Preview Available ! > Features
- High Current
- Low On-Resistance
- No Secondary Breakdown
- Low Driving Power
- Avalanche Rated
2SK2809-01MR
FAP-IIIB Series
N-channel MOS-FET
60V 0,01Ω 50A 50W
> Outline Drawing
> Applications
- Motor Control
- General Purpose Power Amplifier
- DC-DC converters
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item
Symbol
Rating
Drain-Source-Voltage
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Maximum Avalanche Energy
Max. Power Dissipation
Operating and Storage Temperature Range
V DS
ID
I D(puls)
V GS
E AV
PD
T ch
T stg
60
50
200
±20
453
50
150
-55 ~ +150
* L=0,241mH, VCC=24V
Unit
V
A
A
V
mJ*
W
°C
°C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item
Symbol
Test conditions
Drain-Source Breakdown-Voltage
V (BR)DSS ID=1mA
VGS=0V
Gate Threshhold Voltage
V GS(th)
ID=1mA
VDS=VGS
Zero Gate Voltage Drain Current
I DSS
VDS=60V
Tch=25°C
VGS=0V
Tch=125°C
Gate Source Leakage Current
I GSS
VGS=±20V VDS=0V
Drain Source On-State Resistance
R DS(on)
ID=40A
VGS=4V
VGS=10V
Forward Transconductance
g fs
ID=40A
VDS=25V
Input Capacitance
C iss
VDS=25V
Output Capacitance
C oss
VGS=0V
Reverse Transfer Capacitance
C rss
f=1MHz
Turn-On-Time ton (ton=td(on)+tr)
t d(on)
VCC=30V
t r ID=75A
Turn-Off-Time toff (ton=td(off)+tf)
t d(off)
VGS=10V
Avalanche Capability
t f RGS=10 Ω
I AV L = 100µH Tch=25°C
Diode Forward On-Voltage
V SD
IF=160A VGS=0V Tch=25°C
Reverse Recovery Time
t rr IF=80A VGS=0V
Reverse Recovery Charge
Q rr -dIF/dt=100A/µs Tch=25°C
Min.
60
1,0
25
50
Typ.
1,5
10
0,2
10
0,012
0,0075
55
3500
1250
360
15
75
190
110
1,15
75
0,17
Max.
2,0
500
1,0
100
0,017
0,01
5250
1870
540
23
120
285
165
1,65
120
Unit
V
V
µA
mA
nA
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
µC
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R th(ch-a)
R th(ch-c)
Test conditions
channel to air
channel to case
Min. Typ. Max. Unit
62,5 °C/W
2,50 °C/W
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 2SK2809-01MR.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK2809-01MR | N-channel MOS-FET | Fuji Electric |
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