(PDF) 2SK2734 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK2734
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2734 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A) • 4V gate drive devices. • Large current capacitance ID = 5 A Outline TO-92MOD. ADE-208-520 1st. Edition D G S 32 1 1. Source 2. Drain 3. Gate 1 page Body to Drain Diode Reverse Recovery Time 500 di / dt = 50 A / µs, VGS = 0 Ta = 25 °C, Pulse Test 200 100 50 20 10 5 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 Reverse Drain Current I DR (A) 2SK2734 2000 1000 500 200 100 50 Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss 20 VGS = 0 10 f = 1 MHz 0 10 20 30 40 50 Drain to Source Voltage V DS (V) Dynamic Input Characteristics 50 I D = 5A 40 VDD = 5 V 10 V 30 20 V VDS 20 VGS 20 16 12 8 10 V DD = 20 V 4 10 V 5V 0 0 8 16 24 32 40 Gate Charge Qg (nc) Switching Characteristics 500 200 100 t d(off) 50 t f tr 20 t d(on) 10 VGS = 10 V, V DD = 10 V 5 PW = 2 µs, duty < 1 % 0.05 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 5 5 Page

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PDF 2SK2734 Data sheet ( Hoja de datos )