(PDF) 2SK2726 Datasheet - Silicon N Channel MOS FET High Speed Power Switching

Número de pieza	2SK2726
Descripción	Silicon N Channel MOS FET High Speed Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2726 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Avalanche ratings Outline TO–220CFM ADE-208-453 B 3rd. Edition D G 123 1. Gate 2. Drain 3. Source S 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 12 8 ID=7A 5A 4 2A 0 4 8 12 16 20 Gate to Source Voltage V GS (V) 2SK2726 Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 2 1 VGS = 10, 15 V 0.5 0.2 0.1 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 5 Pulse Test 4 3 2 V GS = 10 V 1 ID=7A 5A 2A 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 20 10 Tc = –25 °C 5 25 °C 2 1 75 °C 0.5 V DS = 10 V Pulse Test 0.2 0.1 0.2 0.5 1 2 5 10 20 Drain Current I D (A) 5 5 Page

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PDF 2SK2726 Data sheet ( Hoja de datos )