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PDF 2SK2724 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2724 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SK2724
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 18 A)
RDS(on)2 = 40 mΩ Max. (VGS = 4 V, ID = 18 A)
• Low Ciss Ciss =1 200 pF Typ.
• Built-in G-S Protection Diode
• Isolated TO-220 package
PACKAGE DIMENSIONS (in millimeter)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
0.7 ±0.1
2.54
1.3 ±0.2
1.5 ±0.2
2.54
2.5 ±0.1
0.65 ±0.1
1. Gate
2. Drain
3. Source
123
MP-45F (ISOLATED TO-220)
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)*
Total Power Dissipation (TA = 25 ˚C)
Total Power Dissipation (TC = 25 ˚C)
Channel Temperature
Storage Temperature
VDSS
60
VGSS
±20
ID(DC)
±35
ID(pulse)
±140
PT 2.0
PT 30
Tch 150
Tstg –55 to +150
V
V
A
A
W
W
˚C
˚C
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
* PW ≤ 10 µs, duty cycle ≤ 1 %
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device actually used, an additional protection circuit is externally required if voltage exceeding the rated voltage may
be applied to this device.
The information in this document is subject to change without notice.
Document No. D10515EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
©
1996
1 page  
2SK2724
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
80
60
VGS = 4 V
40
20 VGS = 10 V
0 ID = 18 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
10 000
1 000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
100
10
1.0
0.1
1.0 10
IF - Diode Current - A
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1 VGS = 0
0.1
0
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td(off)
tf
tr
td(on)
VDD =30 V
VGS(on) =10 V
RG =10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
ID = 35 A
14
60
VGS
VDD = 12 V
30 V
40 48 V
VDS
12
10
8
6
20 4
2
0
0 20 40 60 80
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2724.PDF ] | |
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