(PDF) 2SK2529 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK2529
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK2529 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • RDS(on) = 7 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO-220CFM ADE-208-356F 7th. Edition D 12 3 1. Gate G 2. Drain 3. Source S 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 1.0 Pulse Test 0.8 0.6 0.4 I D = 50 A 0.2 20 A 10 A 0 2 4 6 8 10 Gate to Source Voltage V GS (V) 2SK2529 Static Drain to Source on State Resistance vs. Drain Current 0.5 Pulse Test 0.2 0.1 0.05 0.02 0.01 0.005 VGS = 4 V 10 V 0.002 0.001 0.0005 1 3 10 30 100 300 1000 Drain Current I D (A) Static Drain to Source on State Resistance vs. Temperature 0.04 Pulse Test 0.032 0.024 0.016 V GS = 4 V I D = 50 A 10, 20 A 0.008 0 –40 10 V 10, 20, 50 A 0 40 80 120 160 Case Temperature Tc (°C) Forward Transfer Admittance vs. Drain Current 500 V DS = 10 V 200 Pulse Test 100 50 Tc = –25 °C 20 10 25 °C 5 75 °C 2 1 0.5 0.1 0.3 1 3 10 30 Drain Current I D (A) 100 5 5 Page

Páginas	Total 10 Páginas
PDF Descargar	[ Datasheet 2SK2529.PDF ]

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PDF 2SK2529 Data sheet ( Hoja de datos )