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PDF 2SK2415 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2415 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2415, 2SK2415-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2415 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 0.10 Ω MAX. (@ VGS = 10 V, ID = 4.0 A)
RDS(on)2 = 0.15 Ω MAX. (@ VGS = 4 V, ID = 4.0 A)
• Low Ciss Ciss = 570 pF TYP.
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended applica-
tions.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±8.0 A
Drain Current (pulse)*
ID(pulse)
±32 A
Total Power Dissipation (Tc = 25 ˚C) PT1
20 W
Total Power Dissipation (Ta = 25 ˚C) PT2
1.0 W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Single Avalanche Current**
IAS 8.0 A
Single Avalanche Energy**
EAS 6.4 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0
PACKAGE DIMENSIONS
(in millimeters)
6.5 ± 0.2
5.0 ± 0.2
4
2.3 ± 0.2
0.5 ± 0.1
1 23
1.3 MAX.
0.6 ± 0.1
2.3 2.3
0.6 ± 0.1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-251 (MP-3)
6.5 ± 0.2
5.0 ± 0.2
4
2.3 ± 0.2
0.5 ± 0.1
12 3
1.3 MAX.
2.3 2.3
0.9 0.8
MAX. MAX.
0.8
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252 (MP-3Z)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. D13207EJ1V1DS00 (1st edition)
(Previous No. TC-2496)
Date Published December 1997 N CP(K)
Printed in Japan
©
1994
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
180
160
140
120 VGS = 4 V
100
VGS = 10 V
80
60
40
20
0
- 50
ID = 4.0 A
0 50 100
Tch - Channel Temperature - °C
150
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
100
Coss
Crss
10
1
10
VDS - Drain to Source Voltage - V
100
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
10
0.1
di/dt = 50 A/µ s
VGS = 0
1.0 10
ID - Drain Current - A
2SK2415, 2SK2415-Z
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
Pulsed
10
10 V
1
VGS = 0
0
1.0 2.0
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td(off)
tf
tr
td(on)
1.0 10
ID - Drain Current - A
VDD = 30 V
VGS = 10 V
RG = 10 Ω
100
80
70
60
50 VDS
40
30
20
10
0
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
ID = 8.0 A 16
VDD = 48 V 14
12
VGS
10
8
6
4
2
10 20 30
Qg - Gate Charge - nC
0
40
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2415.PDF ] | |
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