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PDF 2SK2410 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2410 | |
| Descripción | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2410
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2410 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)
RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)
• Low Ciss Ciss = 1500 pF TYP.
• High Avalanche Capability Ratings
• Built-in G-S Gate Protection Diodes
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3
4.5 ±0.2
3.2 ±0.2
2.7 ±0.2
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60 V
Gate to Source Voltage
VGSS
±20 V
Drain Current (DC)
ID(DC)
±30 A
Drain Current (pulse)*
ID(pulse)
±120
A
Total Power Dissipation (Tc = 25 ˚C) PT1
35 W
Total Power Dissipation (TA = 25 ˚C) PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS
30 A
Single Avalanche Energy**
EAS
90 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7 ±0.1
2.54
1.3 ±0.2
2.5 ±0.1
1.5 ±0.2 0.65 ±0.1
2.54
1 23
1. Gate
2. Drain
3. Source
MP-45F(ISOLATED TO-220)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
Document No. TC-2497
(O. D. No. TC-8029)
Date Published November 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
70
60
50
VGS = 4 V
40
VGS = 10 V
30
20
10
0
–50
0
ID = 15 A
50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
10
1 10 100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
100
10
0.1
1.0 10
ID - Drain Current - A
100
1000
2SK2410
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10 V
10
VGS = 0
1
0 0.5 1.0 1.5 2.0
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td(off)
tf
tr
td(on)
VDD = 30 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
DYANMIC INPUT/OUTPUT CHARACTERISTICS
80 16
ID = 30 A
70 14
60
50 VDD = 48 V
12
10
40
VDS
30
8
VGS
6
20 4
10 2
0 10 20 30 40 50 60 70 80
Qg - Gate Charge - nC
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 2SK2410.PDF ] | |
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