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PDF 2SK2329 Data sheet ( Hoja de datos )
| Número de pieza | 2SK2329 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK2329 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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2SK2329(L), 2SK2329(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 2.5 V gate drive device can be driven from 3 V source
• Suitable for Switching regulator, DC-DC converter
Outline
DPAK-2
4
4
1
23
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
1 page  
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
0.4
I D = 10 A
0.2 5 A
2A
0 2 4 6 8 10
Gate to Source Voltage V GS (V)
2SK2329(L), 2SK2329(S)
Static Drain to Source on State Resistance
vs. Drain Current
1
Pulse Test
0.5
0.2
0.1
0.05
VGS = 2.5 V
4V
0.02
0.01
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
0.06
I D = 2 A, 5 A, 10 A
2.5 V
0.04
0.02
2 A, 5 A, 10 A
V GS = 4 V
0
–40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20 Tc = –25 °C
10
25 °C
5 75 °C
2
1
0.5
0.1
V DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I D (A)
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 2SK2329.PDF ] | |
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