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PDF 2SK1957 Data sheet ( Hoja de datos )
| Número de pieza | 2SK1957 | |
| Descripción | Silicon N-Channel MOS FET | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK1957 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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2SK1957
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No Secondary Breakdown
• Suitable for Switching regulator, DC - DC converter,Motor Control
Outline
TO-220FM
D 12 3
1. Gate
G 2. Drain
3. Source
S
1 page  
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.0
1.6 5 A
1.2 Pulse Test
0.8 2 A
0.4 I D= 1A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
1.0
Pulse Test
0.8
0.6 I D = 5 A
0.4 1 A, 2 A
0.2
0
–40 0 40 80 120
Case Temperature TC (°C)
160
2SK1957
Static Drain to Source on State
Resistance vs. Drain Current
10
5 Pulse Test
2
VGS = 10 V
1
0.5
15 V
0.2
0.1
0.5
12
5 10 20
Drain Current ID (A)
50
Forward Transfer Admittance
vs. Drain Current
50
20
VDS = 10 V
Pulse Test
10
5 Tc = 25°C
2 –25°C
1
75°C
0.5
0.1
0.2 0.5 1 2
5
Drain Current I D (A)
10
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet 2SK1957.PDF ] | |
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