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2SK1517 Schematic ( PDF Datasheet ) - Hitachi Semiconductor

Teilenummer 2SK1517
Beschreibung Silicon N-Channel MOS FET
Hersteller Hitachi Semiconductor
Logo Hitachi Semiconductor Logo 




Gesamt 9 Seiten
2SK1517 Datasheet, Funktion
2SK1517, 2SK1518
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
Built-in fast recovery diode (trr = 120 ns)
Suitable for motor control, switching regulator, DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source






2SK1517 Datasheet, Funktion
2SK1517, 2SK1518
5,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
2,000 VGS = 0
Pulse Test
1,000
500
200
100
50
0.5
12
5 10 20
Reverse Drain Current IDR (A)
50
Dynamic Input Characteristics
500
VDD = 100 V
250 V
20
400 400 V
VGS
VDS
16
300 12
200 8
100
VDD = 400 V
250V
ID = 20 A
4
100 V
0
0 40 80 120 160 200
Gate Charge Qg (nc)
10,000
1,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
VGS = 0
f = 1 MHz
Coss
100
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics
500
td (off)
200
100 tf
tr
50 td (on)
20
10
VGS = 10 V
VDD
=
30
V
PW = 2 µs, duty < 1%
5
0.5 1
2
5 10 20
Drain Current ID (A)
50
6

6 Page







SeitenGesamt 9 Seiten
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