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2SK1341 Schematic ( PDF Datasheet ) - Hitachi Semiconductor

Teilenummer 2SK1341
Beschreibung Silicon N-Channel MOS FET
Hersteller Hitachi Semiconductor
Logo Hitachi Semiconductor Logo 




Gesamt 9 Seiten
2SK1341 Datasheet, Funktion
2SK1341
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source






2SK1341 Datasheet, Funktion
2SK1341
5,000
Body to Drain Diode Reverse
Recovery Time
di/dt = 100 A/µs, Ta = 25°C
2,000 VGS = 0
Pulse Test
1,000
500
200
100
50
0.1
0.2 0.5 1 2
5
Reverse Drain Current IDR (A)
10
10,000
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
1,000
Ciss
Coss
100
Crss
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1,000
Dynamic Input Characteristics
20
800 VDD = 250 V
400 V
600 V
600
VDS
VGS
400
16
12
8
200
600 V ID = 6 A
4
400 V
VDD = 250 V
0
0 20 40 60 80 100
Gate Charge Qg (nc)
Switching Characteristics
500 VGS = 10 V, VDD =.. 30 V
PW = 2 µs, duty < 1%
200
td (off)
100 tf
tr
50
td (on)
20
10
5
0.1 0.2
0.5 1 2
5
Drain Current ID (A)
10
6

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