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2SK1304 Schematic ( PDF Datasheet ) - Hitachi Semiconductor

Teilenummer 2SK1304
Beschreibung Silicon N-Channel MOS FET
Hersteller Hitachi Semiconductor
Logo Hitachi Semiconductor Logo 



Gesamt 9 Seiten
		
2SK1304 Datasheet, Funktion
2SK1304
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
Can be driven from 5 V source
Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-3P
D
G1
2
3
1. Gate
2. Drain
(Flange)
S
3. Source






2SK1304 Datasheet, Funktion
2SK1304
Body to Drain Diode Reverse
Recovery Time
500
di/dt = 50 A/µs, Ta = 25°C
200
VGS = 0
Pulse Test
100
50
20
10
5
0.5 1.0 2
5 10 20 50
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
100
20
80 VDS
60
VDD = 25 V
50 V
80 V
16
12
VDD = 80 V
40
50 V
25 V
20
VGS
8
ID = 40 A
4
0
0 40 80 120 160 200
Gate Charge Qg (nc)
10,000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
1,000
Coss
Crss
100
VGS = 0
f = 1 MHz
10
0 10 20 30 40 50
Drain to Source Voltage VDS (V)
1,000
500
200
Switching Characteristics
td (off)
tf
100
50
20
10
0.5
tr
td (on)
VGS = 10 V
VDD
=
30
V
PW = 2 µs, duty < 1%
1.0 2
5 10 20
Drain Current ID (A)
50
6

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