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Número de pieza | 2SK1301 | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1301 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 2SK1301
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S
1 page Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.5
20 A
2.0
Pulse Test
1.5
10 A
1.0
ID = 5 A
0.5
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.5
ID = 20 A
Pulse Test
0.4
0.3
0.2
0.1
0
–40
VGS = 4 V
10 A
5A
20 A
10 A
5A
VGS = 10 V
0 40 80 120
Case Temperature TC (°C)
160
2SK1301
0.5
0.2
0.1
0.05
Static Drain to Source on State
Resistance vs. Drain Current
VGS = 4 V
10 V
0.02
Pulse Test
0.01
0.005
1
2 5 10 20 50 100
Drain Current ID (A)
Forward Transfer Admittance
vs. Drain Current
50
VDS = 10 V
Pulse Test
20
10
–25°C
TC = 25°C
75°C
5
2
1
0.5
0.2
0.5 1.0 2
5 10 20
Drain Current ID (A)
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2SK1301.PDF ] |
Número de pieza | Descripción | Fabricantes |
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