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Número de pieza | 2SK1300 | |
Descripción | Silicon N-Channel MOS FET | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2SK1300 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 2SK1300
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• 4 V gate drive device
Can be driven from 5 V source
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-220AB
D 123
1. Gate
G 2. Drain
(Flange)
3. Source
S
1 page Drain to Source Saturation Voltage
vs. Gate to Source Voltage
2.5
Pulse Test
2.0 10 A
1.5
5A
1.0
0.5 ID = 2 A
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Temperature
0.5
Pulse Test
ID = 10 A
5A
0.4 2 A
10 A
5A
0.3 VGS = 4 V
2A
0.2
10 V
0.1
0
–40 0 40 80 120 160
Case Temperature TC (°C)
2SK1300
Static Drain to Source on State
Resistance vs. Drain Current
5
Pulse Test
2
1
0.5
VGS = 4 V
0.2
10 V
0.1
0.05
0.5
12
5 10 20
Drain Current ID (A)
50
Forward Transfer Admittance
vs. Drain Current
50
VDS = 10 V
20 Pulse Test
10 TC = –25°C
5
25°C
75°C
2
1
0.5
0.1 0.2
0.5 1
2
5
Drain Current ID (A)
10
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2SK1300.PDF ] |
Número de pieza | Descripción | Fabricantes |
2SK1300 | Silicon N-Channel MOS FET | Hitachi Semiconductor |
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