(PDF) 2SK1155 Datasheet - Silicon N-Channel MOS FET

Número de pieza	2SK1155
Descripción	Silicon N-Channel MOS FET
Fabricantes	Hitachi Semiconductor
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No Preview Available ! 2SK1155, 2SK1156 Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC-DC converter Outline TO-220AB D 123 1. Gate G 2. Drain (Flange) 3. Source S 1 page Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 6 5A 4 2A 2 ID = 1 A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature 5 VGS = 10 V Pulse Test 4 3 ID = 5 A 2 2A 1A 1 0 –40 0 40 80 120 160 Case Temperature TC (°C) 2SK1155, 2SK1156 Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 5 VGS = 10 V 2 15 V 1.0 0.5 0.2 0.1 0.5 1.0 2 5 10 20 Drain Current ID (A) 50 Forward Transfer Admittance vs. Drain Current 10 VDS = 20 V 5 Pulse Test –25°C TC = 25°C 75°C 2 1.0 0.5 0.2 0.1 0.05 0.1 0.2 0.5 1.0 2 Drain Current ID (A) 5 5 5 Page

Páginas	Total 9 Páginas
PDF Descargar	[ Datasheet 2SK1155.PDF ]

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PDF 2SK1155 Data sheet ( Hoja de datos )