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Teilenummer | 2SK1152L |
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Beschreibung | Silicon N-Channel MOS FET | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 9 Seiten 2SK1151(L)(S), 2SK1152(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
4
4
1
23
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
2SK1151(L)(S), 2SK1152(L)(S)
1,000
Body to Drain Diode Reverse
Recovery Time
500 di/dt = 100A/µs, Ta = 25°C
VGS = 0
Pulse Test
200
100
50
20
10
0.05 0.1 0.2
0.5 1.0 2
Reverse Drain Current IDR (A)
5
Dynamic Input Characteristics
500
100 V
400
VDS
250 V
400 V
20
16
300 12
VGS
200 8
100 VDD = 400 V ID = 1.5 A 4
250 V
100 V
0
0 2 4 6 8 10
Gate Charge Qg (nc)
1,000
100
10
Typical Capacitance
vs. Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
1
0 10 20 30 40
Drain to Source Voltage VDS (V)
50
Switching Characteristics
100
VGS = 10 V
VDD
=•
•
30
V
50 PW = 2 µs, duty < 1%
td (off)
20
tf
10
5 td (on)
tr
2
1
0.05
0.1 0.2 0.5 1.0 2
Drain Current ID (A)
5
6
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ 2SK1152L Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
2SK1152 | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1152L | Silicon N-Channel MOS FET | Hitachi Semiconductor |
2SK1152S | Silicon N-Channel MOS FET | Hitachi Semiconductor |
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