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2SK1152L Schematic ( PDF Datasheet ) - Hitachi Semiconductor

Teilenummer 2SK1152L
Beschreibung Silicon N-Channel MOS FET
Hersteller Hitachi Semiconductor
Logo Hitachi Semiconductor Logo 




Gesamt 9 Seiten
2SK1152L Datasheet, Funktion
2SK1151(L)(S), 2SK1152(L)(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator and DC-DC converter
Outline
DPAK-1
4
4
1
23
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S






2SK1152L Datasheet, Funktion
2SK1151(L)(S), 2SK1152(L)(S)
1,000
Body to Drain Diode Reverse
Recovery Time
500 di/dt = 100A/µs, Ta = 25°C
VGS = 0
Pulse Test
200
100
50
20
10
0.05 0.1 0.2
0.5 1.0 2
Reverse Drain Current IDR (A)
5
Dynamic Input Characteristics
500
100 V
400
VDS
250 V
400 V
20
16
300 12
VGS
200 8
100 VDD = 400 V ID = 1.5 A 4
250 V
100 V
0
0 2 4 6 8 10
Gate Charge Qg (nc)
1,000
100
10
Typical Capacitance
vs. Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
1
0 10 20 30 40
Drain to Source Voltage VDS (V)
50
Switching Characteristics
100
VGS = 10 V
VDD
=
30
V
50 PW = 2 µs, duty < 1%
td (off)
20
tf
10
5 td (on)
tr
2
1
0.05
0.1 0.2 0.5 1.0 2
Drain Current ID (A)
5
6

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