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PDF 2SK1104 Data sheet ( Hoja de datos )
| Número de pieza | 2SK1104 | |
| Descripción | Silicon N-Channel Junction FET | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SK1104 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Silicon Junction FETs (Small Signal)
2SK1104
Silicon N-Channel Junction FET
For switching
Complementary to 2SJ164
s Features
q Low ON-resistance
q Low-noise characteristics
s Absolute Maximum Ratings (Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VGDS
ID
IG
PD
Tch
Tstg
Ratings
−65
20
10
300
150
−55 to +150
Unit
V
mA
mA
mW
°C
°C
4.0±0.2
unit: mm
marking
123
1.27 1.27
1: Source
2.54±0.15
2: Gate
3: Drain
EIAJ: SC-72
New S Type Package
s Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current IDSS*
Gate to Source leakage current IGSS
Gate to Drain voltage
VGDS
Gate to Source cut-off voltage VGSC
Forward transfer admittance
| Yfs |
Drain to Source ON-resistance RDS(on)
Input capacitance (Common Source) Ciss
Output capacitance (Common Source) Coss
Reverse transfer capacitance (Common Source) Crss
Conditions
VDS = 10V, VGS = 0
VGS = −30V, VDS = 0
IG = −10µA, VDS = 0
VDS = 10V, ID = 10µA
VDS = 10V, ID = 1mA, f = 1kHz
VDS = 10mV, VGS = 0
VDS = 10V, VGS = 0, f = 1MHz
min typ max Unit
0.2 6 mA
−10 nA
−65 V
−1.5 −3.5
V
1.8 2.5
mS
250 Ω
7 pF
1.3 pF
1.5 pF
* IDSS rank classification
Runk
O
IDSS (mA)
0.2 to 1
P
0.6 to 1.5
Q
1 to 3
R
2.5 to 6
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SK1104.PDF ] | |
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