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Teilenummer | 2SJ186 |
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Beschreibung | Silicon P-Channel MOS FET | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 9 Seiten 2SJ186
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
UPAK
G
21
3
4
D
1. Gate
2. Drain
3. Source
4. Drain
S
2SJ186
1,000
500
200
Body to Drain Diode Reverse
Recovery Time
Pulse Test
Ta = 25°C
di/dt = 50 A/µs
VGS = 0
100
50
20
10
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5
Reverse Drain Current IDR (A)
–1
1,000
100
10
Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
1
0 –10 –20 –30 –40 –50
Drain to Source Voltage VDS (V)
0
–200
Dynamic Input Characteristics
VDD
= –100 V
–150 V
–200 V
VDS
–400
VDD = –200 V
–150 V
–200 V
0
–4
–8
–600
–800
–12
VGS
ID = –0.5 A
–16
–1,000
0
2468
Gate Charge Qg (nc)
–20
10
Switching Characteristics
100
VGS = 10 V
50 PW = 2 µs
dVuDtDy=..<–13%0V
20
tf
td (off)
10
td (on)
5
tr
2
1
–0.01 –0.02 –0.05 –0.1 –0.2 –0.5
Drain Current ID (A)
–1
6 Page | ||
Seiten | Gesamt 9 Seiten | |
PDF Download | [ 2SJ186 Schematic.PDF ] |
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