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Teilenummer | 2SJ160 |
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Beschreibung | Silicon P-Channel MOS FET | |
Hersteller | Hitachi Semiconductor | |
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Gesamt 8 Seiten 2SJ160, 2SJ161, 2SJ162
Silicon P-Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SK1056, 2SK1057 and 2SK1058
Features
• Good frequency characteristic
• High speed switching
• Wide area of safe operation
• Enhancement-mode
• Good complementary characteristics
• Equipped with gate protection diodes
• Suitable for audio power amplifier
2SJ160, 2SJ161, 2SJ162
Switching Time vs. Drain Current
500
200 ton
100
50 toff
20
10
5
–0.1 –0.2 –0.5 –1.0 –2
–5 –10
Drain Current ID (A)
Switching Time Test Circuit
Output
RL
Input
PW = 50 µs
duty ratio
= 1%
50 Ω
10%
Input
–20 V
ton
90%
Output
Waveforms
90%
toff
10%
6
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ 2SJ160 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
2SJ160 | Silicon P-Channel MOS FET | Hitachi Semiconductor |
2SJ161 | Silicon P-Channel MOS FET | Hitachi Semiconductor |
2SJ162 | Silicon P-Channel MOS FET | Hitachi Semiconductor |
2SJ163 | Silicon P-Channel Junction FET | Panasonic Semiconductor |
2SJ164 | Silicon P-Channel Junction FET | Panasonic Semiconductor |
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