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Teilenummer | 2SJ130L |
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Beschreibung | Silicon P-Channel MOS FET | |
Hersteller | Hitachi Semiconductor | |
Logo | ||
Gesamt 8 Seiten 2SJ130(L), 2SJ130(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance
• High speed switching
• Low drive current
• No secondary breakdown
• Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators
Outline
DPAK-1
4
4
1
23
D
12 3
1. Gate
G 2. Drain
3. Source
4. Drain
S
2SJ130(L), 2SJ130(S)
–2.0
–1.6
Reverse Drain Current vs.
Source To Drain Voltage
VGS = 0
Pulse Test
–1.2
–0.8
–0.4 –5 V, –10 V
VGS = 0, 10 V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage VSD (V)
3
D=1
1.0
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
TC = 25°C
0.3 0.2
0.1
0.1 0.05
0.02
0.03 1 0S.h0o1t Pulse
0.01
10 µ
100 µ
θch–c (t) = γS (t) · θch–c
θch–c = 6.25°C/W, TC = 25°C
PDM
PW
T
D
=
PW
T
1m
10 m
100 m
Pulse Width PW (s)
1
10
Switching Time Test Circuit
Vin Monitor
D.U.T
Vout Monitor
RL
Vin
–10 V
50 Ω
V=..D–D30 V
Waveforms
Vin
10%
Vout
td (on)
90%
90%
90%
10%
tr
td (off)
10%
tf
6
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ 2SJ130L Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
2SJ130 | Silicon P-Channel MOS FET | Hitachi Semiconductor |
2SJ130L | Silicon P-Channel MOS FET | Hitachi Semiconductor |
2SJ130S | Silicon P-Channel MOS FET | Hitachi Semiconductor |
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