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PDF 2SJ108 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ108 | |
| Descripción | Silicon P Channel Junction Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ108
2SJ108
Low Noise Audio Amplifier Applications
Unit: mm
· Recommended for first stages of EQ amplifiers and MC head
amplifiers.
· High |Yfs|: |Yfs| = 22 mS (typ.)
(VDS = −10 V, VGS = 0, IDSS = −3 mA)
· Low noise: En = 0.95 nV/Hz1/2 (typ.)
(VDS = −10 V, ID = −1 mA, f = 1 kHz)
· High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V)
· Complementary to 2SK370
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
25
-10
200
125
-55~125
Electrical Characteristics (Ta = 25°C)
Unit
V
mA
mW
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = 25 V, VDS = 0
V (BR) GDS VDS = 0, IG = 100 mA
IDSS
(Note)
VDS = -10 V, VGS = 0
VGS (OFF)
ïYfsï
Ciss
Crss
NF (1)
VDS = -10 V, ID = -0.1 mA
VDS = -10 V, VGS = 0, f = 1 kHz
VDS = -10 V, VGS = 0, f = 1 MHz
VGD = 10 V, ID = 0, f = 1 MHz
VDS = -10 V, ID = -1 mA, RG = 1 kW,
f = 10 Hz
NF (2)
VDS = -10 V, ID = -1 mA, RG = 1 kW,
f = 1 kHz
Note: IDSS classification GR: -2.6~-6.5 mA, BL: -6.0~-12 mA, V: -10~-20 mA
Min Typ. Max Unit
¾ ¾ 1.0 nA
25 ¾ ¾
V
-2.6 ¾ -20 mA
0.15 ¾
2.0
V
8 22 ¾ mS
¾ 105 ¾
pF
¾ 32 ¾ pF
¾ 1.0 10
dB
¾ 0.5
2
1 2003-03-25
1 page  
2SJ108
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
5 2003-03-25
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet 2SJ108.PDF ] | |
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