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PDF 2SJ106 Data sheet ( Hoja de datos )
| Número de pieza | 2SJ106 | |
| Descripción | Silicon P Channel Junction Type Field Effect Transistor | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SJ106 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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2SJ106
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ106
Audio Frequency Amplifier Applications
Analog Switch Applications
Constant Current Applications
Impedance Converter Applications
Unit: mm
• High breakdown voltage: VGDS = 50 V
• High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
• Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = −5 mA)
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
50
−10
150
125
−55~125
Unit
V
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source on resistance
Input capacitance
Reverse transfer capacitance
Symbol
Test Condition
IGSS
VGS = 30 V, VDS = 0
V (BR) GDS VDS = 0, IG = 100 μA
IDSS
(Note)
VDS = −10 V, VGS = 0
VGS (OFF)
⎪Yfs⎪
RDS (ON)
Ciss
Crss
VDS = −10 V, ID = −0.1 μA
VDS = −10 V, VGS = 0, f = 1 kHz
VDS = −10 mV, VGS = 0
IDSS = −5 mA
VDS = −10 V, VGS = 0, f = 1 MHz
VDG = −10 V, ID = 0, f = 1 MHz
Min Typ. Max Unit
⎯ ⎯ 1.0 nA
50 ⎯ ⎯
V
−1.2 ⎯ −14 mA
0.3 ⎯ 6.0 V
1.0 4.0 ⎯ mS
⎯ 270 ⎯
Ω
⎯ 18 ⎯ pF
⎯ 3.6 ⎯ pF
Note: IDSS classification Y: −1.2~−3.0 mA, GR (G): −2.6~−6.5 mA, BL (L): −6~−14 mA
Marking
1 2007-11-01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SJ106.PDF ] | |
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