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PDF CXK77B3610GB-7 Data sheet ( Hoja de datos )
| Número de pieza | CXK77B3610GB-7 | |
| Descripción | High Speed Bi-CMOS Synchronous Static RAM | |
| Fabricantes | Sony Corporation | |
| Logotipo |  |
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CXK77B3610GB -6/7
High Speed Bi-CMOS Synchronous Static RAM
Preliminary
For the availability of this product, please contact the sales office.
Description
The CXK77B3610GB-6/7 is a high speed 1M bit
119 pin BGA (Plastic)
Bi-CMOS synchronous statis RAM organized as
32768 words by 36 bits. This SRAM integrates input
registers, high speed SRAM and write buffer onto a
single monolithic IC and features the delayed write
system to reduce the dead cycles.
Features
• Fast cycle time
(Cycle) (Frequency)
CXK77B3610GB-6
6ns
166MHz
CXK77B3610GB-7
7ns
142MHz
• Inputs and outputs are LVTTL/LVCMOS compatible
• Single 3.3V power supply: 3.3V ± 0.15V
• Byte-write possible
• OE asynchronization
• JTAG test circuit
• Package 119TBGA
• 3 kinds of synchronous operation mode
Register-Register mode (R-R mode)
Register-Flow Thru mode (R-F mode)
Register-Latch mode (R-L mode)
Function
32768 word × 36bit High Speed Bi-CMOS Synchronous SRAM
Structure
Silicon gate Bi-CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
PE95128-PS
1 page  
Mode Select Truth Table
Item
Register-Resister mode
Register-Flow Thru mode
Register-Latch mode
M1 M2
LH
LL
HL
CXK77B3610GB
Electrical Characteristics
• DC and operating characteristics
Item Symbol
Input leakage current
ILI
Output leakage current
ILO
Operating power supply
current
Standby current
Output high voltage
Output low voltage
∗ VCC = 3.3V, Ta = 25°C
ICC
ISB
VOH
VOL
(VCC = 3.3V ± 10%, GND = 0V, Ta = 0 to 70°C)
Test conditions
Min. Typ.∗ Max. Unit
VIN = GND to VCC
–1 —
1 µA
VO = GND to VCC
G = VIH
–10 —
10 µA
Cycle = min.
Duty = 100%
IOUT = 0mA
— — TBD mA
ZZ ≥ VIH
20 mA
IOH = –2.0mA
2.4 —
—V
IOL = 2.0mA
— — 0.4 V
• I/O capacitance
Item
Symbol
Test conditions
Input capacitance
CIN VIN = 0V
Clock input capacitance
CCLK
VIN = 0V
Output capacitance
COUT
VOUT = 0V
Note) These parameters are sampled and are not 100% tested.
(Ta = 25°C, f = 1MHz)
Min. Max. Unit
— 5 pF
— 8 pF
— 8 pF
–5–
5 Page 
Register-Flow Thru mode
Timing waveform of READ CYCLE
K
K
A0 to 14
tKP
tS tH
n
CXK77B3610GB
tKH
n+1
tKL
n+2
W
S
G
DQ0 to 35
tS tH
tS tH
tS tH
tKQ1
tAA
tLZ1
Qn – 1
tKQ1
tOE
tOHZ tOLZ
Qn
tHZ
Qn + 1
Timing waveform of WRITE CYCLE
K
K
A0 to 14
tH
tS
n
S
W/BWx
G
DQ0 to 35
Dn – 1
n+1
Dn
n+2
Dn + 1
– 11 –
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet CXK77B3610GB-7.PDF ] | |
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