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PDF CXK77B1810AGB Data sheet ( Hoja de datos )
| Número de pieza | CXK77B1810AGB | |
| Descripción | High Speed Bi-CMOS Synchronous Static RAM | |
| Fabricantes | Sony Corporation | |
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CXK77B1810AGB -5/6
High Speed Bi-CMOS Synchronous Static RAM
Preliminary
For the availability of this product, please contact the sales office.
Description
The CXK77B1810AGB-5/6 is a high speed 1M bit
Bi-CMOS synchronous static RAM organized as
65536 words by 18 bits. This SRAM integrates input
registers, high speed SRAM and write buffer onto a
single monolithic IC and features the delayed write
system to reduce the dead cycles.
119 pin BGA (Plastic)
Features
• Fast cycle time
(Cycle) (Frequency)
CXK77B1810AGB-5 5ns
200MHz
-6 6ns
167MHz
• Inputs and outputs are GTL/HSTL compatible
• Controlled Impedance Driver
• Single 3.3V power supply: 3.3V±0.15V
• Byte-write possible
• OE asynchronization
• JTAG test circuit
• Package 119TBGA
• 4 kinds of synchronous operation mode
Register-Register mode (R-R mode)
Register-Flow Thru mode (R-F mode)
Register-Latch mode (R-L mode)
Dual clock mode (D-C mode)
Function
65536 word x 18bit High Speed Bi-CMOS Synchronous SRAM
Structure
Silicon gate Bi-CMOS IC
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
PE96811
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CXK77B1810AGB.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CXK77B1810AGB | High Speed Bi-CMOS Synchronous Static RAM | Sony Corporation |
| CXK77B1810AGB-5 | High Speed Bi-CMOS Synchronous Static RAM | Sony Corporation |
| CXK77B1810AGB-6 | High Speed Bi-CMOS Synchronous Static RAM | Sony Corporation |
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