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PDF D2011 Data sheet ( Hoja de datos )
| Número de pieza | D2011 | |
| Descripción | METAL GATE RF SILICON FET | |
| Fabricantes | Seme LAB | |
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Hay una vista previa y un enlace de descarga de D2011 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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TetraFET
D2011UK
MECHANICAL DATA
METAL GATE RF SILICON FET
B
E
D
F
8
7
6
5
O
J
KL
C
1
2
A
3
4
Q
N
M
I
P
H
G
DBC1 Package
PIN 1 Source
PIN 5 Source
PIN 2 Drain
PIN 6 Gate
PIN 3 Drain
PIN 7 Gate
PIN 4 Source
PIN 8 Source
DIM mm
Tol. Inches Tol.
A 6.47 0.08 .255 .003
B 0.76 0.08 .030 .003
C 45° 5° 45° 5°
D 0.76 0.08 .030 .003
E 1.14 0.08 .045 .003
F 2.67 0.08 .105 .003
G 11.73 0.13 .462 .005
H 8.43 0.08 .332 .003
I 7.92 0.08 .312 .003
J 0.20 0.02 .008 .001
K 0.64 0.02 .025 .001
L 0.30 0.02 .012 .001
M 3.25 0.08 .128 .003
N 2.11 0.08 .083 .003
O 6.35SQ 0.08 .250SQ .003
P 1.65 0.51 .065 .020
Q 0.13 max .005 max
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• LOW NOISE
• HIGH GAIN
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 2 GHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PD Power Dissipation
70W
BVDSS
Drain – Source Breakdown Voltage
65V
BVGSS
Gate – Source Breakdown Voltage
±20V
ID(sat)
Drain Current
8A
Tstg Storage Temperature
–65 to 150°C
Tj Maximum Operating Junction Temperature
200°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Document Number 2543
Issue 1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D2011.PDF ] | |
Hoja de datos destacado
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| D2011 | METAL GATE RF SILICON FET | Seme LAB |
| D2011UK | METAL GATE RF SILICON FET | Seme LAB |
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