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Teilenummer | DBF60T |
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Beschreibung | 6.0A Single-Phase Bridge Rectifier | |
Hersteller | Sanyo Semicon Device | |
Logo | ||
Gesamt 2 Seiten Ordering number:EN3402A
DBF60T
Silicon Diffused Junction Type
6.0A Single-Phase Bridge Rectifier
Applications
· For primary rectification as switching regulator.
Features
· High reliability attained glass passivation.
· High surge.
· Plastic molded structure.
· Peak reverse voltage:VRM=200 to 600V.
· Average rectified current:IO=6.0A.
Package Dimensions
unit:mm
1191
[DBF60T]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Rectified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
Conditions
VRM
IO
Tc=110˚C, with 125×125×1.5mm3 AI fin
Ta=25˚C, without fin
IFSM 50Hz sine wave, 1 cycle
Tj
Tstg
DBF60TC
200
→
→
→
→
→
DBF60TE DBF60TG
400 600
→ 6.0
→ 2.8
→ 170
→ 150
→ –40 to +150
Unit
V
A
A
A
˚C
˚C
Electrical Characteristics at Ta = 25˚C, per constituent element of bridge.
Parameter
Forward Voltage
Reverse Current
Thermal Resistance (Junction-Ambient)
Thermal Resistance (Junction-Case)
Note:Moutning torque:5kg·cm max
Electrical Connection
Symbol
Conditions
VF
IR
Rth(j-a)
Rth(j-c)
IF=2.5A
VR:At each VRM
Without fin
With AI fin
Ratings
min typ max
Unit
1.05 V
10 µA
26 ˚C/W
3.4 ˚C/W
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/N120MH, JK(KOTO) No.3402-1/2
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Seiten | Gesamt 2 Seiten | |
PDF Download | [ DBF60T Schematic.PDF ] |
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