MJ10015 Datasheet PDF - Motorola Inc
| Part Number | MJ10015 | |
| Description | 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS | |
| Manufacturers | Motorola Inc | |
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10015/D
MJ10015
SWITCHMODE Series
MJ10016
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
50 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. They are
400 AND 500 VOLTS
250 WATTS
particularly suited for line–operated switchmode applications such as:
• Switching Regulators
• Motor Controls
• Inverters
• Solenoid and Relay Drivers
• Fast Turn–Off Times
1.0 µs (max) Inductive Crossover Time — 20 Amps
2.5 µs (max) inductive Storage Time — 20 Amps
CASE 197–05
• Operating Temperature Range –65 to + 200_C
TO–204AE TYPE
• Performance Specified for
≈ 50 ≈ 8
(TO–3 TYPE)
Reversed Biased SOA with Inductive Load
Switching Times with Inductive Loads
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSaturation Voltages
Leakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
@ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purposes:
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Symbol
VCEO
VCEV
VEB
IC
ICM
IB
IBM
PD
TJ, Tstg
Symbol
RθJC
TL
MJ10015
MJ10016
400 500
600 700
8.0
50
75
10
15
250
143
1.43
– 65 to + 200
Max
0.7
275
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C
SWITCHMODE is a trademark of Motorola, Inc.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
|
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The Safe Operating Area figures shown in Figures 7 and 8 are
specified ratings for these devices under the test conditions
shown.
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
1.0
10 µs
dc MJ10015
MJ10016
TC = 25°C
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
2.0 5.0 10 20
50 100 200 500 1000
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
50
40 TURN–OFF LOAD LINE
BOUNDARY FOR MJ10016
THE LOCUS FOR MJ10015
30 IS 100 V LESS
u20
IC
IB1
10
10 VBE(off) = 5.0 V
TC = 25°C
0
0 100 200 300 400
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 8. Reverse Bias Switching Safe
Operating Area
500
MJ10015 MJ10016
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two Iimitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 7 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 7 may be found at any case tem-
perature by using the appropriate curve on Figure 9.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable dur-
ing reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 8 gives the complete RBSOA
characteristics.
100
80
60
40
20
0
0
FORWARD BIAS
SECOND BREAKDOWN
DERATING
THERMAL
DERATING
40 80 120 160
TC, CASE TEMPERATURE (°C)
Figure 9. Power Derating
200
Motorola Bipolar Power Transistor Device Data
10
9
8
7
6
5 IC = 20 A
4
3
2 SEE TABLE 1 FOR CONDITIONS,
1 FIGURE 6 FOR WAVESHAPE.
0
0 12 34 5 678
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure 10. Typical Reverse Base Current
versus VBE(off) With No External Base
Resistance
5
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| Information | Total 6 Pages | |
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| Download | [ MJ10015.PDF Datasheet ] | |
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