Datenblatt-pdf.com


MJ10012 Schematic ( PDF Datasheet ) - ON Semiconductor

Teilenummer MJ10012
Beschreibung POWER TRANSISTORS DARLINGTON NPN SILICON
Hersteller ON Semiconductor
Logo ON Semiconductor Logo 




Gesamt 6 Seiten
MJ10012 Datasheet, Funktion
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon Power Darlington
Transistor
The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors
designed for automotive ignition, switching regulator and motor control applications.
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 400 Vdc (Min)
175 Watts Capability at 50 Volts
Automotive Functional Tests
COLLECTOR
BASE
1 k 30
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEMITTER
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(RBE = 27 )
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
Symbol
VCEO
VCER
MJ10012 MJH10012
400
550
Unit
Vdc
Vdc
VCBO
VEBO
IC
IB
PD
TJ, Tstg
600 Vdc
8.0 Vdc
10 Adc
15
2.0 Adc
175 118 Watts
100 47.5 Watts
1.0 1.05 W/_C
– 65 to + 200 – 55 to + 150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
RθJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSoldering Purposes: 1/8from
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCase for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
1.0
275
0.95
275
Unit
_C/W
_C
Order this document
by MJ10012/D
MJ10012
MJH10012
10 AMPERE
POWER TRANSISTORS
DARLINGTON NPN
SILICON
400 VOLTS
175 AND 118 WATTS
CASE 1–07
TO–204AA
(TO–3)
MJ10012
CASE 340D–01
TO–218 TYPE
MJH10012
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1






MJ10012 Datasheet, Funktion
MJ10012 MJH10012
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in
systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us:
USA / EUROPE: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX: [email protected] – TOUCHTONE (602) 244–6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design–NET.com
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
6
Motorola Bipolar Power Transistor Device Data
*MJ10012/MJ1D001*2/D

6 Page







SeitenGesamt 6 Seiten
PDF Download[ MJ10012 Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
MJ1001Medium-Power Complementary Silicon TransistorsMotorola  Inc
Motorola Inc
MJ1001(MJ1000 / MJ1001) SILICON POWER TRANSISTORSavantIC
SavantIC
MJ1001(MJ1000 / MJ1001) Complementary Power DarlingtonsComset Semiconductors
Comset Semiconductors
MJ10011Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
New Jersey Semiconductor
MJ10012POWER TRANSISTORS(10A/400V/175W)Mospec Semiconductor
Mospec Semiconductor

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche