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Teilenummer | MJ10007 |
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Beschreibung | 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS | |
Hersteller | Motorola Inc | |
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Gesamt 8 Seiten MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ10007/D
™Designer's Data Sheet
SWITCHMODE Series
MJ10007*
*Motorola Preferred Device
NPN Silicon Power Darlington
Transistors with Base-Emitter
Speedup Diode
The MJ10007 Darlington transistor is designed for high–voltage, high–speed,
power switching in inductive circuits where fall time is critical. It is particularly suited
for line operated switchmode applications such as:
10 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
400 VOLTS
150 WATTS
• Switching Regulators
• Inverters
• Solenoid and Relay Drivers
• Motor Controls
• Deflection Circuits
Fast Turn–Off Times
30 ns Inductive Fall Time — 25_C (Typ)
500 ns Inductive Storage Time — 25_C (Typ)
Operating Temperature Range –65 to + 200_C
100_C Performance Specified for:
≈ 100 ≈ 15
CASE 1–07
TO–204AA
(TO–3)
Reversed Biased SOA with Inductive Loads
Switching Times with Inductive Loads
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSaturation Voltages
Leakage Currents
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
— Peak (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak(1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 100_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎv(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.
Symbol
VCEO
VCEX
VCEV
VEB
IC
ICM
IB
IBM
PD
TJ, Tstg
Value
400
450
500
8.0
10
20
2.5
5.0
150
100
0.86
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol Max Unit
RθJC
TL
1.17 _C/W
275 _C
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
MJ10007
The Safe Operating Area figures shown in Figures 11 and 12 are
specified ratings for these devices under the test conditions
shown.
20
10
100 µs
1.0 ms
5.0
5.0
2.0 dc ms
1.0 TC = 25°C
0.5 BONDING WIRE LIMITED
THERMALLY LIMITED
0.2 SECOND BREAKDOWN LIMITED
0.1
0.05
0.02
4.0
MJ10007
6.0 10 20 40 60 100 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
10 µs
350
400
Figure 11. Forward Bias Safe Operating Area
10
TURN OFF LOAD LINE
BOUNDARY FOR MJ10007
8 THE LOCUS FOR MJ10006
IS 50 V LESS
v6
TJ 100°C
4
2
VBE(off) = 5 V
VBE(off) = 2 V
VBE(off) = 0 V
0
0 100 200 300 400 500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 12. Reverse Bias Switching
Safe Operating Area
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 11 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der-
ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 11 may be found at any case tem-
perature by using the appropriate curve on Figure 13.
TJ(pk) may be calculated from the data in Figure 10. At
high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as VCEX(sus) at a given collector current
and represents a voltage–current condition that can be sus-
tained during reverse biased turn–off. This rating is verified
under clamped conditions so that the device is never sub-
jected to an avalanche mode. Figure 12 gives the complete
reverse bias safe operating area characteristics.
100
SECOND BREAKDOWN
80 DERATING
60
40 THERMAL DERATING
20
0
0 40
80 120 160 200
TC, CASE TEMPERATURE (°C)
Figure 13. Power Derating
6 Motorola Bipolar Power Transistor Device Data
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ MJ10007 Schematic.PDF ] |
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