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Teilenummer | MJ1000 |
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Beschreibung | Medium-Power Complementary Silicon Transistors | |
Hersteller | Motorola Inc | |
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Gesamt 4 Seiten MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
• High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc
• Monolithic Construction with Built–in Base–Emitter Shunt Resistors
Order this document
by MJ1000/D
NPN
MJ1000
MJ1001*
*Motorola Preferred Device
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 VOLTS
90 WATTS
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PNP
MJ900
MJ901
COLLECTOR
NPN
MJ1000
MJ1001
COLLECTOR
BASE
BASE
≈ 4.0 k ≈ 60
≈ 4.0 k ≈ 60
EMITTER
Figure 1. Darlington Circuit Schematic
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
EMITTER
1
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ MJ1000 Schematic.PDF ] |
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