(PDF) MIG100J101H Datasheet - TOSHIBA Intelligent Power Module Silicon N Channel IGBT

Número de pieza	MIG100J101H
Descripción	TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Fabricantes	Toshiba Semiconductor
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No Preview Available ! MIG100J101H TOSHIBA Intelligent Power Module Silicon N Channel IGBT MIG100J101H High Power Switching Applications Motor Control Applications l Integrates inverter & control circuits (IGBT drive units, protection units for over-current, under-voltage & over-temperature) in one package. l The electrodes are isolated from case. l High speed type IGBT : VCE (sat) = 2.5 V (Max.) toff = 3.0 µs (Max.) trr = 0.30 µs (Max.) l Outline : TOSHIBA 2-110A1A l Weight : 520 g Equivalent Circuit 1. GND (U) 7. GND (W) 13. IN (X) 2. IN (U) 8. IN (W) 14. IN (Y) 3. VD (U) 9. VD (W) 15. IN (Z) 4. GND (V) 10. GND (L) 16. FO 5. IN (V) 11. VD (L) 6. VD (V) 12. OPEN 1 2001-05-29 1 page MIG100J101H 5 2001-05-29 5 Page

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PDF MIG100J101H Data sheet ( Hoja de datos )