(PDF) MIE-824A4 Datasheet - AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE

Número de pieza	MIE-824A4
Descripción	AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
Fabricantes	Unity Opto Technology
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No Preview Available ! AlGaAs/GaAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE MIE-824A4 Description The MIE-824A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coation chip technology. It is molded in water clear plastic package. Package Dimensions φ5.00 (.197) Unit: inches SEE NOTE 2 4.30 (.169) 5.80 (.228) 1.00 (.039) FLAT DENOTES CATHODE Features l High radiant power and high radiant intesity l Peak wavelength λp = 940 nm l Good spectral matching to si-photodetector l Radiant angle: 120° Absolute Maximum Ratings Parameter Power Dissipation Peak Forward Current Continuous Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature 0.50 TYP. (.020) 23.40 MIN. (.921) 2.54 NOM. (.100) SEE NOTE 3 A 1.00MIN. (.039) C Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package. Maximum Rating @ TA=25oC Unit 120 mW 1A 100 mA 5 -55oC to +100oC -55oC to +100oC 260oC for 5 seconds V Unity Opto Technology Co., Ltd. 02/04/2002 1 page

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PDF MIE-824A4 Data sheet ( Hoja de datos )