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PDF MIC5012 Data sheet ( Hoja de datos )

Número de pieza MIC5012
Descripción Dual High- or Low-Side MOSFET Driver Not Recommended for New Designs
Fabricantes Micrel Semiconductor 
Logotipo Micrel Semiconductor Logotipo



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MIC5012
MIC5012
Micrel
Dual High- or Low-Side MOSFET Driver
Not Recommended for New Designs
General Description
The MIC5012 is the dual member of the Micrel MIC501X
driver family. These ICs are designed to drive the gate of an
N-channel power MOSFET above the supply rail in high-
side power switch applications. The 14-pin MIC5012 is
extremely easy to use, requiring only a power FET and
nominal supply decoupling to implement either a high- or
low-side switch.
The MIC5012 charges a 1nF load in 60µs typical. Operation
down to 4.75V allows the MIC5012 to drive standard
MOSFETs in 5V low-side applications by boosting the gate
voltage above the logic supply. In addition, multiple, paral-
leled MOSFETs can be driven by a single MIC5012 for ultra-
high current applications.
Other members of the Micrel driver family include the
MIC5010 full-featured driver, MIC5011 minimum parts count
driver, and MIC5013 protected 8-pin driver.
For new designs, Micrel recommends the pin-compatible
MIC5016 dual MOSFET driver.
Features
• 4.75V to 32V operation
• 2 independent drivers; implements high and low side
drivers
• Less than 1µA standby current in the “off” state per
channel
• Available in small outline SOIC packages
• Internal charge pump to drive the gate of an N-channel
power FET above supply
• Internal zener clamp for gate protection
• Minimum external parts count
• Can be used to boost drive to low-side power FETs
operating on logic supplies
• Independent supply pins for half-bridge applications
Applications
• Lamp drivers
• Motion Control
• Heater switching
• Power bus switching
• Half or full H-bridge drivers
Typical Applications
ON
+
10µF
Control Input
OFF
1/2 MIC5012
V+
Input
Source
Gnd Gate
14.4V
IRF531
Ordering Information
Part Number
MIC5012BN
MIC5012BWM
Temp. Range
–40°C to +85°C
–40°C to +85°C
Package
14-pin Plastic DIP
16-pin Wide SOIC
Figure 1. High Side Driver
#6014
5V
ON 10µF +
Control Input
OFF
1/2 MIC5012
V+
Input
Source
Gnd Gate
48V
100W
Heater
IRF530
Note: The MIC5012 is ESD sensitive.
Figure 2. Low Side Driver
5-114
Protected under one or more of the following Micrel patents:
patent #4,951,101; patent #4,914,546
April 1998

1 page




MIC5012 pdf
MIC5012
Typical Characteristics (Continued)
Turn-off Time
50
40 CGATE =10 nF
30
20
10 CGATE =1 nF
0
0 3 6 9 12 15
SUPPLY VOLTAGE (V)
Micrel
Turn-on Time
2.0
1.75
1.5
1.25
1.0
0.75
0.5
–25 0 25 50 75 100 125
DIE TEMPERATURE (°C)
Charge Pump
Output Current
250
VGATE=V+
200
150
VGATE =V++5V
100
50
0
0
VS=V +–5V
5 10 15 20 25
SUPPLY VOLTAGE (V)
30
Block Diagram
Ground V+
3 12
MIC5012
Input 14
CHARGE
PUMP
500
LOGIC
4 Gate
12.5V
2 Source
V+
10
Applications Information
Functional Description (Refer to Block Diagram)
The MIC5012 consists of two independent drivers sharing
a common ground. The functions are controlled via a logic
block connected to the logic input. When the input is low, all
functions are turned off for low standby current and the gate
of the power MOSFET is also held low through 500to an
N-channel switch. When the input is taken above the turn-
on threshold (3.5V typical), the N-channel switch turns off
and the charge pump is turned on to charge the gate of the
power FET.
The charge pump incorporates a 100kHz oscillator and on-
chip pump capacitors capable of charging 1nF to 5V above
supply in 60µs typical. The charge pump is capable of
pumping the gate up to over twice the supply voltage. For
this reason, a zener clamp (12.5V typical) is provided
between the gate pin and source pin to prevent exceeding
Input 11
LOGIC
CHARGE
PUMP
500
6 Gate
12.5V
5 Source
the VGS rating of the MOSFET at high supplies.
Since the supply pins are independent, the two drivers
contained in the MIC5012 can be operated from separate
supplies of different values (see Figure 6).
Construction Hints
High current pulse circuits demand equipment and assem-
bly techniques that are more stringent than normal, low
current lab practices. The following are the sources of
5-118
April 1998

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