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PDF AO4406 Data sheet ( Hoja de datos )
| Número de pieza | AO4406 | |
| Descripción | N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Alpha Industries | |
| Logotipo |  |
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March 2002
AO4406
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device makes an excellent high side switch for
notebook CPU core DC-DC conversion.
Features
VDS (V) = 30V
ID = 11.5A
RDS(ON) < 14mΩ (VGS = 10V)
RDS(ON) < 16.5mΩ (VGS = 4.5V)
RDS(ON) < 26mΩ (VGS = 2.5V)
SD
SD
SD
GD
SOIC-8
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
Avalanche Current B,E
Repetitive Avalanche Energy B,E L=0.1mH
ID
IDM
IAV
EAV
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
11.5
9.6
80
25
78
3
2.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
23
48
12
Max
40
65
16
Alpha & Omega Semiconductor, Ltd.
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
1 page  
AO4406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
40
30
20
10
0
0.00001
TA=25°C
tA
=
L ⋅ ID
BV − VDD
0.0001
Time in avalanche, tA (s)
Figure 12: Avalanche capability
0.001
4
3
2
1
0
25
10s
Steady-
State
50 75 100 125
TCASE (°C)
Figure 13: Power De-rating (Note A)
150
Alpha & Omega Semiconductor, Ltd.
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet AO4406.PDF ] | |
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