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Teilenummer | BAQ333 |
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Beschreibung | Silicon Planar Diodes | |
Hersteller | Vishay Telefunken | |
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Gesamt 4 Seiten Silicon Planar Diodes
Features
D Saving space
D Hermetic sealed parts
D Fits onto SOD 323 / SOT 23 footprints
D Electrical data identical with the devices
BAQ33...BAQ35 / BAQ133...BAQ135
D Very low reverse current
Applications
Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
BAQ333...BAQ335
Vishay Telefunken
96 12315
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage
Peak forward surge current
Forward current
Junction temperature
Storage temperature range
tp=1ms
Type
BAQ333
BAQ334
BAQ335
Symbol
VR
VR
VR
IFSM
IF
Tj
Tstg
Value
30
60
125
2
200
200
–65...+200
Unit
V
V
V
A
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Test Conditions
Junction ambient
mounted on epoxy–glass hard tissue, Fig. 1
35mm copper clad, 0.9 mm2 copper area per
electrode
Symbol
RthJA
Value
500
Unit
K/W
Document Number 85538
Rev. 2, 01-April-99
www.vishay.de • FaxBack +1-408-970-5600
1 (4)
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ BAQ333 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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BAQ333 | Silicon Planar Diodes | Vishay Telefunken |
BAQ334 | Silicon Planar Diodes | Vishay Telefunken |
BAQ335 | Silicon Planar Diodes | Vishay Telefunken |
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