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HUFA76407P3 Schematic ( PDF Datasheet ) - Fairchild Semiconductor

Teilenummer HUFA76407P3
Beschreibung 12A/ 60V/ 0.107 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET
Hersteller Fairchild Semiconductor
Logo Fairchild Semiconductor Logo 




Gesamt 10 Seiten
HUFA76407P3 Datasheet, Funktion
Data Sheet
HUFA76407P3
December 2001
12A, 60V, 0.107 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
Symbol
DRAIN
(FLANGE)
HUFA76407P3
D
G
S
Features
• Ultra Low On-Resistance
- rDS(ON) = 0.092Ω, VGS = 10V
- rDS(ON) = 0.107Ω, VGS = 5V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves
Ordering Information
PART NUMBER
PACKAGE
BRAND
HUFA76407P3
TO-220AB
76407P
NOTE: When ordering, use the entire part number.
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
HUFA76407P3
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
Continuous
Continuous
Continuous
Continuous
(TC
(TC
(TC
(TC
=
=
=
=
1122335555ooCCooCC,, ,,VVVVGGGGSSSS====150V54VV.)5))V(.)F..(i..gF..uig..rue..r..e2..)2.. )...
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ID
ID
ID
ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS
60
60
±16
12
13
6
6
Figure 4
Figures 6, 17, 18
V
V
V
A
A
A
A
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
NOTE:
1. TJ = 25oC to 150oC.
38
0.25
-55 to 175
300
260
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy
of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.
©2001 Fairchild Semiconductor Corporation
HUFA76407P3 Rev. B






HUFA76407P3 Datasheet, Funktion
Test Circuits and Waveforms
HUFA76407P3
VARY tP TO OBTAIN
REQUIRED PEAK IAS
VGS
tP
0V
RG
VDS
L
DUT
+
VDD
-
IAS
0.01
0
tP
IAS
BVDSS
VDS
VDD
tAV
FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 18. UNCLAMPED ENERGY WAVEFORMS
VGS
Ig(REF)
VDS
RL
DUT
+
VDD
-
FIGURE 19. GATE CHARGE TEST CIRCUIT
VDD
VDS
Qg(TOT)
VGS
VGS = 1V
0 Qg(TH)
Qgs
Ig(REF)
0
Qg(5)
Qgd
VGS = 5V
VGS = 10V
FIGURE 20. GATE CHARGE WAVEFORMS
VDS
RL
VGS
VGS
RGS
DUT
+
VDD
-
FIGURE 21. SWITCHING TIME TEST CIRCUIT
©2001 Fairchild Semiconductor Corporation
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
10%
0
VGS
10%
0
50%
PULSE WIDTH
10%
90%
50%
FIGURE 22. SWITCHING TIME WAVEFORM
HUFA76407P3 Rev. B

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